eVoS ME Bias Solution
Direct Control of Substrate Voltage and Ion Energy Distribution
Features
- Real-time bias voltage and ion current feedback
- Optimized waveform for ion energy control
- High-speed metrology
- Multi-level pulsing with fast DC-level response
- Input and output signals for pulse synchronization
- Closed-loop control
- EtherCat® communication
- High efficiency
Benefits
- Improved process control
- Direct control of wafer bias voltage and resulting ion energies
- Narrow ion energy distributions
- High-precision ion energy selection
- Improved etch rate with less input power
- Streamlined system design and integration
Specifications
Cooling: | Water |
---|---|
Output Frequency (MHz, kHz): | 0.2 to 1.1 MHz |
Input Voltage (V): | 400, 480 VAC +/-10% |
Rack Width: | 19 |
Height (Inches): | 8U |
Output Voltage Range (V): | 5 kV |
Peak Current (A): | 6 |
Pulse Range: | 5 |
Featured Resources

eVoS ME Data Sheet
Asymmetric bias waveform generator for direct control of substrate voltage and ion energy

eVoS™ Family Brochure
By maximizing the ability to tailor ion energy, the eVoS asymmetric bias waveform generator enables precise command of etch and deposition geometries at very small dimensions.
Technical Documentation
Technical Videos

Advanced Energy’s eVoS™: A Paradigm Shift in Semiconductor Bias Technology
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