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UV 400 & UVR 400 Pyrometers


Digital pyrometers with extremely short wavelength for true Wafer Surface Temperature and Reflectance Instrumentation for GaN-based MOCVD epitaxy processes. Temperature range 650 to 1300 °C.

Designed specifically for GaN-based MOCVD epitaxy processes, the UV 400 and UVR 400 systems offer direct measurement of wafer surface temperature, a marked improvement over the traditional susceptor/pocket temperature measurement, leading to enhanced yield. The UVR 400 goes a step further, incorporating an additional reflectometer at 635 nm, operating at a measurement speed of 0.5 kHz, facilitating the measurement of deposition thickness. These systems redefine the standards for LED production processes, with results showcasing a reliable correlation between process temperature and the final product wavelength.


  • Reliable wafer temperature with PL wavelength correlation
  • Device withstands an atmosphere of nitrogen and a vacuum (< 10 mbar)
  • Adjustable subrange within the temperature range
  • Minimize noise in measurement using true photocounting instrumentation
  • Complete solution for reactor temperature control with PhotriX and concentric lightpipe options


  • Improve yield via accurate true wafer temperature measurement
  • Measure temperature directly on the GaN layer using UV wavelength instrumentation
  • Obtain reliable wafer temperature with PL wavelength correlation
  • Capture real-time reflectance measurement using a fast pulsing light source
  • Prevent residue temperature oscillation as seen in NIR emissivity-compensated pyrometers
  • Prevent data skew due to delayed sampling (no shutter on and off)


Operational temperature range (°C): 650 to 1300 °C
Spectral Range (µm): 0.383 to 0.410
Measurement Uncertainty (°C): From 3 °C
Optics (mm): Fixed optics
FOV (minimum spot size) (mmm): Min 8:1 (9.8)
Alignment / Sighting: None
Interface / Output (mA): 0/4 to 20 mA
Exposure Time t90 (ms): 8 ms
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