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eVoS LE Bias Solution


Asymmetric Bias Waveform Generator for Direct Control of Substrate Voltage and Ion Energy

The eVoS™ LE is an asymmetric bias waveform generator designed to achieve direct control of wafer-surface voltage and resulting ion energy distributions (IED) in plasma-based etch and deposition processes. The eVoS system consists of a bi-directional voltage supply combined with an independent current source to establish and control wafer-surface potential. The asymmetric output of the eVoS eliminates the limitations and restrictions of wafer biasing inherent to sinusoidal RF bias application. Fast digital metrology and novel control algorithms enable the production of near mono-energetic IEDs. Use additional parameters for customizing average and time-varying aspects of the wafer surface voltage and resulting ion energy distribution.


  • Ability to produce near mono-energetic ion energy distributions
  • Pulse capability with necessary input and output signals for synchronization
  • Integrated design and compact size eliminates need for matching network
  • High-speed metrology provides real-time bias voltage and ion current feedback
  • Narrow, broad, and multi-peak distributions
  • Adaptable to standard chamber interface


  • Achieve direct control of wafer bias voltage and resulting ion energies
  • Gain enhanced ion energy selection/discrimination when compared to a RF bias method
  • Significantly increase etch selectivity for shorter processes and straighter, deeper features
  • Use less power by using the “right power,” only delivering the useful ion energy
  • Simplify bias power integration


Cooling: Hybrid (air and water)
Output Frequency (MHz, kHz): 400 kHz
Input Voltage (V): 185 to 260 VAC
Rack Width: Chamber Mount and Full Rack
Output Voltage Range (V): 2250 V
Communications Interface: EtherCAT, Ethernet
Process Applications: Etch
Peak Current (A): 1.4
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