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eVoS ME Bias Solution


Direct Control of Substrate Voltage and Ion Energy Distribution

Shrinking chip dimensions and high-aspect-ratio structures demand exacting control of ion energy. With the eVoS™ platform, AE introduces a paradigm shift in bias technology. By maximizing the ability to tailor ion energy, eVoS enables precise command of etch and deposition geometries at very small dimensions. Direct control of wafer-surface voltage and ion energy distribution (IED) empowers process engineers to optimize bias performance for specific process results, ensuring sensitive feature formation. In addition, fast digital metrology and novel control algorithms enable the production of narrower IEDs compared to alternative technologies. These capabilities change what’s possible in plasma processing.


  • Real-time bias voltage and ion current feedback
  • Optimized waveform for ion energy control
  • High-speed metrology
  • Multi-level pulsing with fast DC-level response
  • Input and output signals for pulse synchronization
  • Closed-loop control
  • EtherCat® communication
  • High efficiency


  • Improved process control
  • Direct control of wafer bias voltage and resulting ion energies
  • Narrow ion energy distributions
  • High-precision ion energy selection
  • Improved etch rate with less input power
  • Streamlined system design and integration


Cooling: Water
Output Frequency (MHz, kHz): 0.2 to 1.1 MHz
Input Voltage (V): 400, 480 VAC +/-10%
Rack Width: 19
Height (Inches): 8U
Output Voltage Range (V): 5 kV
Peak Current (A): 6
Pulse Range: 5

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