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eVoS ME Bias Solution
Direct Control of Substrate Voltage and Ion Energy Distribution
Eigenschaften
- Real-time bias voltage and ion current feedback
- Optimized waveform for ion energy control
- High-speed metrology
- Multi-level pulsing with fast DC-level response
- Input and output signals for pulse synchronization
- Closed-loop control
- EtherCat® communication
- High efficiency
Vorteile
- Improved process control
- Direct control of wafer bias voltage and resulting ion energies
- Narrow ion energy distributions
- High-precision ion energy selection
- Improved etch rate with less input power
- Streamlined system design and integration
Spezifikationen
| Kühlung: | Water |
|---|---|
| Ausgangsfrequenz (MHz, kHz): | 0.2 to 1.1 MHz |
| Eingangsspannung (V): | 400, 480 VAC +/-10% |
| Rack Breite: | 19 |
| Höhe (Zoll): | 8U |
| Ausgangsspannungsbereich (V): | 5 kV |
| Spitzenstrom (A): | 6 |
| Impulsbereich: | 5 |
Featured Resources
eVoS ME Data Sheet
Asymmetric bias waveform generator for direct control of substrate voltage and ion energy
eVoS™ Family Brochure
By maximizing the ability to tailor ion energy, the eVoS asymmetric bias waveform generator enables precise command of etch and deposition geometries at very small dimensions.
Technische Dokumentation
Technische Videos
Advanced Energy’s eVoS™: A Paradigm Shift in Semiconductor Bias Technology
Dienstleistungen
Repair
Our worldwide service centers provide fast cycle times, use only AE-qualified parts, and follow the original product's specifications and test procedures for the highest quality repair or calibration.
Calibration and Alignment
Advanced Energy has the tools and processes to ensure your equipment continues to meet its original specifications. Our products are calibrated at global AE service sites with proprietary technology designed to exceed industry standards.
Premium Services
Combine services into a cost-effective plan including warranties, on-site visits, and more.
